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Dopant Selective Deep Reactive Ion Etching Services
Listed as: Dopant Selective Deep Reactive Ion Etching of 4H-SiC Wafer
National Aeronautics and Space Administration
The buyer is seeking specialized deep reactive ion etching services for 4H-SiC wafers. This process requires dopant selective etching capabilities.
Due Fri, Oct 16 at 4:00 PM (in 2 days)
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- Buyer
- National Aeronautics and Space Administration
- Location
- Cleveland, OH
- Type
- Federal · Special notice
- Posted
- Tue, Oct 13, 2026
- Deadline
- Due Fri, Oct 16 at 4:00 PM (in 2 days)
- NAICS code
- 334413
- Source
- SAM.gov (federal)
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